Comparison Analysis of Tunnel Field Effect Transistor and Dopingless Tunnel Field Effect Transistor

Abstract

In the present day, nm technology is highly significant. Along with the application of scaling down of devices, there are several obstacles that are confronted in this nano world due to the reduction in sizes. DLTFETs are a form of nano FET that can effectively address some of the problems. DLTFETs can lower the high temperature needs of traditional TFETs. They can also obtain a lower sub threshold swing. DLTFETs are synthesized utilizing charge plasma principles rather than high temperature annealing methods to form the source and drain. RDFs may be avoided in DLTFETs thanks to these creative approaches. In this research, we will give a comparative analysis on TFET and DLTFET varieties.