Modeling of Gan-MOSHEMT for Use in a High-Frequency Application

Abstract

The calibration, modeling, and simulation of Metal-Oxide-Semiconductor High-Electron Mobility Transistors (MOSHEMTs) based on the AlGaN/GaN material system are presented in detail in this research. With the use of the Sentaurus Technology computer-aided design (TCAD) tool, the device was calibrated and simulated. The effect of gate length on the frequency response of the device has been presented. We used the LTSPICE software to simulate the GaN-MOSHEMT using typical MOSFET equations and their corresponding parameters. The validation of our model was made possible by the following comparison of simulation results obtained from our model with TCAD Sentaurus outcomes. According to the results, an achievable device model helps to design many circuits in high-frequency and power electronics.