ALGaN/ GaN Based HEMT Using Double Gate with Field Plate for Microwave Power Applications

Abstract

Recently semiconductor devices play a significant role in high-power applications due to the critical feature of the hetero-junction structure. In comparison to AlGaAs/ GaAs, AlGaN/ GaN High Electron Mobility Transistors (HEMT) offer more advantages such as high-speed switching.

This article presents Double Gate-Field Plate (DP-FP) AlGaN/ GaN HEMT. Different electrical parameters such as Drain Current, Conduction band energy, Electron Concentration, transconductance, Gate-Source capacitance and Cut-off frequency are investigated.  After Simulation DP-FP HEMT offers maximum drain current I_DMAX=0.23A/mm (Improved by 35.2941%), Electron Concentration 3 ×10¹⁹ (cm-3) (Improved by 66.6667%), Furthermore conduction band energy is 5 eV (Improved by 100%), transconductance 0.16 S/mm (Improved by 32.1453%), Gate-Source capacitance 3.5 ×10^-13 F (Improved by 60.0000%) and Cut-off frequency 800 GHz (Decremented by 11.1111%). Cut-off frequency needs to be improved in future scope. Silvaco TCAD software is used for the simulation of the device.